高注量1 MeV电子辐照下InGaAs单结太阳电池退化规律与机制 / Radiation Effects of InGaAs Single Junction Solar Cell by High Fluence 1 MeV Electron
- Resource Type
- Academic Journal
- Source
- 发光学报 / Chinese Journal of Luminescence. 40(9):1115-1122
- Subject
InGaAs单结太阳电池 高注量电子 位移损伤 载流子寿命 载流子去除效应 - Language
- Chinese
- ISSN
- 1000-7032