Hole spin polarization in GaAlAs:Mn structures
- Resource Type
- Working Paper
- Authors
- Ghazali, A.; Lima, I. C. da Cunha; Boselli, M. A.
- Source
- Phys. Rev B, vol. 63, 153305 (2001)
- Subject
- Condensed Matter - Materials Science
- Language
A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.
Comment: 4 pages