With the development of solid-state nanostructures based on MBE-grown high quality GaAs/AlGaAs heterostructures, low-dimensional systems play a growing role. Since the development of the cleaved edge overgrowth method (CEO) over thirty years ago, many one-dimensional systems have been achieved using various approaches. Still, the CEO samples exhibit unsurpassed mean free paths and very strong lateral confinements, making them an ideal test-bed for investigations of electron transport and electron-electron interactions in a one-dimensional system. A well-defined, steep confinement is created by cleaving the sample in-situ within the MBE system before a crystalline overgrowth of the atomically flat cleave. Multiple approaches for CEO and their challenges are investigated within this work. We successfully optimized the challenging fabrication process gaining new insights on crucial steps. However, none of the samples with doped overgrowth have shown signatures of ballistic 1D transport without the influence of a sidegate, although all requirements for its observation were met. For both samples with doped or un-doped overgrowth, we could demonstrate that a side-gate can create enough lateral confinement to from a wire. All the evidence suggests that the doping in [110] direction creates non-suficient lateral con nement potential, which might be due to facet-related doping issues or other difficulties of the second MBE overgrowth. A novel technique to fabricate high-quality quantum wires, based on a simplification of the cleaved edge overgrowth (CEO) method, has been developed. The most challenging part of the in-situ cleave and second overgrowth is overcome by introducing a side-gate onto an ex-situ cleaved edge. This novel method is more widely accessible, opening up the eld to non-MBE specialists. In this cleaved edge deposition (CED) technique, the confinement is achieved by the side-gate on the ex-situ cleaved surface. We could prove ballistic transport features through the 1D-wire. Direct current bias measurements showed transconductance transitions forming curved diamond-like structures from which we could extract a subband spacing of 4:64meV and a geometrical capacitance of 35:6 aF. Additionally, features of the "0.7 structure" could be observed. With the simplification of the CEO process, we believe the now widely accessible technique will foster the 1D experiments and allow straightforward technology transfer to other material systems, e.g. InAs.