Sub-9 nm high-performance and low-power transistors based on an in-plane NbSe2 /MoSe2 /NbSe2 heterojunction.
- Resource Type
- Article
- Source
- Nanoscale; 11/14/2023, Vol. 15 Issue 42, p17029-17035, 7p
- Subject
- Language
- ISSN
- 20403364