High-power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy.
- Resource Type
- Article
- Authors
- Jaeckel, H.; Meier, H. P.; Bona, G. L.; Walter, W.; Webb, D. J.; Van Gieson, E.
- Source
- Applied Physics Letters. 9/11/1989, Vol. 55 Issue 11, p1059. 3p.
- Subject
- *SEMICONDUCTOR lasers
*HETEROJUNCTIONS
*MOLECULAR beam epitaxy
*ALUMINUM compounds
- Language
- ISSN
- 0003-6951
We demonstrate a high-power AlGaAs single quantum well graded-index separate confinement heterojunction laser grown by molecular epitaxy over channeled substrates. Fundamental mode operation up to 130 mW for reflection modified devices has been achieved at a high differential quantum front-facet efficiency of 81%. This device structure allows extremely low threshold currents to 6 mA for power lasers due to the incorporation of lateral current blocking pn junction by crystallographic plane-dependent doping of amphoteric dopants. We obtained a very high-power continuous-wave fundamental mode operation of this type of laser at extremely low threshold currents and very high overall efficiency of more than 50%. This laser shows considerable potential for applications in optical storage and printer technology. [ABSTRACT FROM AUTHOR]