Orthorhombic HoMnO3 thin films were grown epitaxially on LaAlO3 (001) substrates by using apulsed laser deposition technique. The films showed perfectly orthorhombic crystallization and werewell-aligned with the substrates. The in-plane dielectric constant and the dielectric loss of HoMnO3films were measured as functions of temperature (80 ~ 300 K) and frequency (120 ~ 100 kHz) byusing interdigital surface electrodes. Two thermally-activated dielectric relaxations were found, andthe respective peaks shifted to higher temperatures as the measuring frequency was increased. Thein-plane dielectric properties of epitaxial orthorhombic HoMnO3 films were considered to have auniversal dielectric response behavior, and the dipoar effects and the hopping conductivity inducedby the charge carriers were used to explain the results. The dielectric properties at low temperatures,which showed the multiferroicity, of the orthorhombic HoMnO3 films are discussed.