Comparing different switching techniques for Silicon Carbide MOSFET assisted Silicon IGBT based hybrid switch
- Resource Type
- Conference
- Authors
- Ozdemir, Sadik; Acar, Fatih; Selamogullari, Ugur S.
- Source
- 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION) Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION), 2015 Intl Aegean Conference on. :476-481 Sep, 2015
- Subject
- Power, Energy and Industry Applications
Insulated gate bipolar transistors
Switches
MOSFET
Silicon carbide
Switching circuits
Energy loss
Inverters
Light load efficiency
hybrid switch
synchronous rectification
- Language
This study compares different switching techniques for Silicon Carbide (SiC) MOSFET assisted Silicon (Si) IGBT based hybrid snitch and presents the effect of hybrid switch control techniques on the efficiency improvement. The hybrid switch which parallels a IGBT with a SiC MOSFET is proposed as a solution to improve the light load efficiency. The hybrid switch combines desirable properties both IGBT and SiC MOSFET. Different operation modes of hybrid switch are analyzed in PSIM using a simple circuit and if is shown that the hybrid switch performs better compared to IGBT alone operation.