Improving the NBTI characteristics of long-channel PMOSFETs by short channel with source underlap structure
- Resource Type
- Conference
- Authors
- Lee, C-W; Park, S-K; Kim, J-K; Kim, S-H; Kwon, S-J; Kim, H-W; Hwang, Y-C; Park, Y-S
- Source
- 2013 IEEE International Integrated Reliability Workshop Final Report Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International. :110-112 Oct, 2013
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
MOSFET
Logic gates
Delays
Stress
Degradation
Integrated circuit modeling
NBT
long-channel PMOS
source underlap structure
- Language
- ISSN
- 1930-8841
2374-8036
Recently long-channel PMOS transistors are being used in delay circuits to increase delay time. Negative Bias Temperature Instability (NBTI) has channel length dependency which shows that long-channel devices degrade more than short channel devices. We suggest a source underlap structure with short channel transistor to solve this problem. We confirmed the short-channel device with underlap structure shows improved NBTI characteristics compared to normal long-channel device through a device simulation.