Oxygen partial pressure and annealing temperature influence on the performance of back-channel-etch zinc tin oxide thin film transistors
- Resource Type
- Conference
- Authors
- Xiao, Yuxiang; Xiao, Xiang; Zhang, Letao; Ju, Xin; Lu, Hongjuan; Zhang, Shengdong
- Source
- 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AMFPD), 2016 The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices. :135-138 Jul, 2016
- Subject
- Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Robotics and Control Systems
Annealing
Electrodes
Thin film transistors
Iron
Sputtering
Threshold voltage
Wet etching
- Language
Zinc tin oxide (ZTO) thin film transistors (TFTs) with back-channel-etch (BCE) structure are demonstrated. The influence of oxygen partial pressure during ZTO layer sputtering is discussed and an optimal O 2 /Ar ratio of 1% is achieved. The effect of annealing temperature is studied and the device annealed at 300°C performs well. The wet etching of Mo source/drain electrodes is carried out in Mo etchant which shows little damage to ZTO layer. The BCE ZTO TFT exhibits a field effect mobility of 1.88 cm 2 V −1 s −1 , a subthreshold slope of 0.37V/decade, and an on-off current ratio larger than 10 7 . The comparable performances between BCE ZTO TFT and lift-off ZTO TFT indicate back-channel-etch ZTO TFT is a feasible technique and suitable for mass production.