Large Memory Window Antifuse HfO₂-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °C Retention
- Resource Type
- Periodical
- Authors
- Hsieh, D.; Ni, J.; Yeh, W.; Hong, Z.; Luo, H.; Hsu, M.; Cho, T.; Chao, T.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(4):2824-2829 Apr, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Hafnium oxide
Nonvolatile memory
Programming
Internet of Things
Security
Integrated circuits
Tin
Antifuse
automotive (ATV) security integrated circuits (ICs)
CMOS-compatible
high-temperature retention
Internet of Things (IoTs) ICs
NVM
one-time programmable (OTP)
write/read disturbance
- Language
- ISSN
- 0018-9383
1557-9646
In this work, CMOS-compatible antifuse HfO2-based one-resistor and one-OTP (1R1O) nonvolatile memories (NVMs) were successfully fabricated and achieved a record-high pulsed memory window (MW) of $2\times 10^{{8}}$ at a low read voltage of 1 V for the first time. By modulating the switching oxide thickness, the 1R1O NVMs with a 5 nm HfO2 tested under a crossbar memory array scheme can tolerate a write/read disturbance of $2\times 10^{{7}}/10^{{9}}$ cycles and show a robust 200 °C retention with an extremely stable pulsed MW of $2\times 10^{{8}}$ after the read disturbance (RD) of $10^{{9}}$ cycles. According to pulsed characteristic and reliability viewpoints, the 5 nm HfO2 1R1O NVMs are very suitable candidates for Internet of Things (IoTs) and automotive (ATV) security integrated circuits (ICs).