Performance Characterization of High-Speed InAlAs Avalanche Photodiode with Double Passivation
- Resource Type
- Conference
- Authors
- Wu, Meng-Chien; Ho, Wen-Jeng; Liu, Jheng-Jie; Yu, Chia-Chun; Li, Yen-Chu
- Source
- 2021 Opto-Electronics and Communications Conference (OECC) Opto-Electronics and Communications Conference (OECC), 2021. :1-3 Jul, 2021
- Subject
- Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
Temperature measurement
Structural rings
Temperature
Optical device fabrication
Avalanche photodiodes
Dark current
Capacitance
- Language
- ISSN
- 2166-8892
We fabricated high speed InAlAs avalanche photodiode without guard ring. It demonstrated the dark current of 1.9 nA and capacitance of 0.16 pF at 0.9 $\text{V}_{\text{br}}$, and $\text{f}_{3-\text{dB}}$ of 10 GHz under different incident optical-powers.