Structure of Carbonic Layer in Ohmic Contacts: Comparison of Silicon Carbide/Carbon and Carbon/Silicide Interfaces
- Resource Type
- Authors
- Michał A. Borysiewicz; A. Kuchuk; Paweł Borowicz; Zbigniew Adamus; M. Ekielski; Anna Piotrowska; Mariusz Latek; Eliana Kamińska
- Source
- ISRN Physical Chemistry. 2013:1-11
- Subject
- Materials science
Article Subject
Silicon
Graphene
chemistry.chemical_element
law.invention
symbols.namesake
chemistry.chemical_compound
Carbon film
chemistry
Chemical engineering
law
Silicide
symbols
Silicon carbide
Raman spectroscopy
Ohmic contact
Carbon
- Language
- ISSN
- 2090-7761
The structure of carbonic layer in three samples composed of 4H polytype of silicon carbide and the following sequence of layers: carbon/nickel/silicon/nickel/silicon was investigated with Raman spectroscopy. Different thermal treatment of the samples led to differences in the structure of carbonic layer. Raman measurements were performed with visible excitation focused on two interfaces: silicon carbide/carbon and carbon/silicide. The results showed differences in the structure across carbon film although its thickness corresponds to 8/10 graphene layers.