Superconducting Contact Geometries for Next-Generation Quantized Hall Resistance Standards.
- Resource Type
- Academic Journal
- Authors
- Panna AR; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.; Kruskopf M; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.; Physikalisch-Technische Bundesanstalt, Department of Electrical Quantum Metrology, Braunschweig, 38116, Germany.; Rigosi AF; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.; Marzano M; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.; Istituto Nazionale Di Ricerca Metrologica, Torino 10135, Italy.; Patel DK; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.; Payagala SU; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.; Jarrett DG; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.; Newell DB; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.; Elmquist RE; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.
- Source
- Publisher: Institute of Electrical and Electronics Engineers Country of Publication: United States NLM ID: 0422676 Publication Model: Print Cited Medium: Print ISSN: 0018-9456 (Print) Linking ISSN: 00189456 NLM ISO Abbreviation: IEEE Trans Instrum Meas Subsets: PubMed not MEDLINE
- Subject
- Language
- English
- ISSN
- 0018-9456
Precision quantum Hall resistance measurements can be greatly improved when implementing new electrical contact geometries made from superconducting NbTiN. The sample designs described here minimize undesired resistances at contacts and interconnections, enabling further enhancement of device size and complexity when pursuing next-generation quantized Hall resistance devices.