Structural and photoluminescent characteristics of porous GaAs capped with GaAs.
- Resource Type
- Article
- Authors
- Lebib, Amira; Hannachi, Riadh; Beji, Lotfi; Zaaboub, Zouhour; Sfaxi, Laarbi; Maaref, Hassen; Hassen, Frej
- Source
- Materials Science in Semiconductor Processing. Nov2017, Vol. 71, p151-155. 5p.
- Subject
- *GALLIUM arsenide
*PHOTOLUMINESCENCE
*OPTICAL properties of gallium arsenide
*POROUS materials
*SCANNING electron microscopy
*X-ray diffraction
*CRYSTALLOGRAPHY
- Language
- ISSN
- 1369-8001
In this paper, we present the results of structural and room temperature photoluminescence studies on porous GaAs (π-GaAs) capped with GaAs. The porous structure formation was confirmed by scanning electron microscopy (SEM) and relatively homogeneous pores of diameters as small as 4 nm was grown along <111>B directions. X-ray diffraction (XRD) investigations confirm the high crystal quality of the capping layer and a lattice mismatch of 4% between the two layers was determined. The room temperature photoluminescence (PL) spectrum of porous GaAs recorded during steady-state excitation shows a strong PL covering the red–blue band. Time resolved photoluminescence (PLRT) investigations provide evidence for the existence of PL components with different origins. [ABSTRACT FROM AUTHOR]